sup/sub75n08-10 vishay siliconix document number: 70263 s-57253erev. b, 24-feb-98 www.vishay.com faxback 408-970-5600 2-1 n-channel 75-v (d-s), 175 c mosfet
v (br)dss (v) r ds(on) ( ) i d (a) 75 0.010 75 a d g s n-channel mosfet to-220ab top view gds drain connected to tab to-263 s d g top view SUP75N08-10 sub75n08-10
parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t 175 c) t c = 25 c i d 75 a a (t j = 175 c) t c = 125 c i d 55 a pulsed drain current i dm 240 a avalanche current i ar 60 repetitive avalanche energy b l = 0.1 mh e ar 280 mj power dissipation t c = 25 c (to-220ab and to-263) p d 187 c w power dissipation t a = 25 c (to-263) d p d 3.7 w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit junction to ambient pcb mount (to-263) d r hja 40 c/w junction-to-ambient free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 0.8 notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1o square pcb (fr-4 material).
sup/sub75n08-10 vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70263 s-57253erev. b, 24-feb-98 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 75 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 3.5 4.5 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 75 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 75 v , v gs = 0 v, t j = 125 c 50 a v ds = 75 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 120 a dis os r i a v gs = 10 v, i d = 30 a 0.0087 0.010 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.017 v gs = 10 v, i d = 30 a, t j = 175 c 0.021 forward transconductance a g fs v ds = 15 v, i d = 30 a 30 s dynamic b input capacitance c iss v 0 v v 25 v f 1 mh 4800 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 910 pf reverse transfer capacitance c rss 270 total gate charge c q g v30vv 10vi75a 85 120 c gate-source charge c q gs v ds = 30 v , v gs = 10 v, i d = 75 a 31 nc gate-drain charge c q gd 24 turn-on delay time c t d(on) v30vr047 20 40 rise time c t r v dd = 30 v, r l = 0.47 i 75a v 10v r 25 95 200 ns turn-off delay time c t d(off) dd , l i d 75 a, v gen = 10 v, r g = 2.5 65 120 ns fall time c t f 20 60 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 75 a pulsed current i sm 240 a forward voltage a v sd i f = 75 a , v gs = 0 v 1.0 1.3 v reverse recovery time t rr i 75 a di/d 100 a/ 80 120 ns peak reverse recovery current i rm(rec) i f = 75 a, di/dt = 100 a/ s 7 9 a reverse recovery charge q rr 0.28 0.54 c notes a. pulse test: pulse width 300 sec, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup/sub75n08-10 vishay siliconix document number: 70263 s-57253erev. b, 24-feb-98 www.vishay.com faxback 408-970-5600 2-3
output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) w ) v gs v gs gate-to-source voltage (v) transconductance (s) g fs 0 50 100 150 200 250 0246810 0 1000 2000 3000 4000 5000 6000 7000 0 102030405060 0 4 8 12 16 20 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 0 20406080100 0 0.002 0.004 0.006 0.008 0.010 0.012 0 20406080100 0 50 100 150 200 02468 25 c 55 c 6 v t c = 125 c v ds = 30 v i d = 75 a v gs = 10 v 7 v 8 v v gs = 10 v v gs = 20 v c iss c oss c rss t c = 55 c 25 c 125 c 5 v 4 v 9 v
sup/sub75n08-10 vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70263 s-57253erev. b, 24-feb-98
on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) w ) source current (a) i s 0 0.5 1.0 1.5 2.0 2.5 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c
normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 5 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 3 safe operating area maximum avalanche and drain current vs. case temperature t c case temperature ( c) v ds drain-to-source voltage (v) drain current (a) i d drain current (a) i d 100 500 10 0.1 0 20 40 60 80 100 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 10 s 100 s 1 ms 10 ms 100 ms dc t c = 25 c single pulse limited by r ds(on) 0.1 1 10 100 1
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